SI6801DQ vishay siliconix document number: 70187 s-56944erev. d, 23-nov-98 www.vishay.com faxback 408-970-5600 2-1 n- and p-channel, reduced q g , fast switching mosfet v ds (v) r ds(on) ( ) i d (a) n - channel 20 0.160 @ v gs = 4.5 v 1.9 n - channel 20 0.260 @ v gs = 3.0 v 1.5 p - channel 20 0.190 @ v gs = 4.5 v 1.7 p - channel 20 0.280 @ v gs = 3.0 v 1.3 s 2 g 2 d 2 p-channel mosfet d 1 g 1 s 1 n-channel mosfet SI6801DQ d 1 s 1 s 1 g 1 1 2 3 4 8 7 6 5 d 2 s 2 s 2 g 2 tssop-8 top view
parameter symbol n-channel p-channel unit drain-source voltage v ds 20 20 v gate-source voltage v gs 12 v continuous drain current (t j = 150 c) a t a = 25 c i d 1.9 1.7 a continuous drain current (t j = 150 c) a t a = 70 c i d 1.5 1.3 a pulsed drain current i dm 8 a continuous source current (diode conduction) a i s 1.0 1.0 maximum power dissipation a t a = 25 c p d 1.0 w maximum power dissipation a t a = 70 c p d 0.64 w operating junction and storage temperature range t j , t stg 55 to 150 c
parameter symbol n- or p-channel unit maximum junction-to-ambient a r thja 125 c/w notes a. surface mounted on fr4 board, t 10 sec.
SI6801DQ vishay siliconix www.vishay.com faxback 408-970-5600 2-2 document number: 70187 s-56944erev. d, 23-nov-98
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